CHARACTERIZATION OF DEEP LEVELS IN MODULATION-DOPED ALGAAS/GAAS FETS

被引：34

作者：

VALOIS, AJ

ROBINSON, GY

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 10期

关键词：

D O I：

10.1109/EDL.1983.25763

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：360 / 362

页数：3

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