SPECTROSCOPY OF THE DEEP LEVELS IN TIN-DOPED GA-AL-AS

被引：13

作者：

BALLAND, B ^{[1
]}

BLONDEAU, R ^{[1
]}

MAYET, L ^{[1
]}

DECREMOUX, B ^{[1
]}

HIRTZ, P ^{[1
]}

机构：

[1] LCR THOMSON CSF,F-91400 ORSAY,FRANCE

来源：

THIN SOLID FILMS | 1980年 / 65卷 / 03期

关键词：

D O I：

10.1016/0040-6090(80)90237-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：275 / 281

页数：7

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共 14 条

[1] DONOR-LEVELS ANALYSIS IN GAAIAS DOUBLE HETEROSTRUCTURE
BALLAND, B
VINCENT, G
BOIS, D
HIRTZ, P
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 108 - 110
[2] TRANSIENT CURRENT TRAP SPECTROSCOPY (TCTS) IN GAAS-GAALAS HETEROJUNCTIONS
BALLAND, B
BLONDEAU, R
PINARD, P
[J]. SOLID STATE COMMUNICATIONS, 1978, 26 (11) : 679 - 683
[3] BALLAND B, 1978, DGRSTPE7771633 FIN R
[4] BALLAND B, 1976, DGRSTPE7570813 FIN R
[5] BALLAND B, UNPUBLISHED
[6] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP
HENRY, CH
LANG, DV
[J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016
[7] NONRADIATIVE RECOMBINATION AT DEEP LEVELS IN GAAS AND GAP BY LATTICE-RELAXATION MULTIPHONON EMISSION
LANG, DV
HENRY, CH
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (22) : 1525 - 1528
[8] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3014 - 3022
[9] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS
LANG, DV
LOGAN, RA
JAROS, M
[J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030
[10] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS
LANG, DV
LOGAN, RA
[J]. PHYSICAL REVIEW LETTERS, 1977, 39 (10) : 635 - 639