GROWTH OF INP/INGAAS MULTIPLE QUANTUM-WELL STRUCTURES BY CHEMICAL BEAM EPITAXY

被引：9

作者：

SKEVINGTON, PJ

HALLIWELL, MAG

LYONS, MH

AMIN, SJ

REJMANGREENE, MAZ

DAVIES, GJ

机构：

[1] BT Laboratories, Ipswich, IP5 7RE, Martlesham Heath

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90412-C

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InP/InGaAs multiple quantum well structures with up to 200 periods have been grown by CBE. These structures exhibit exceptional lateral uniformity, measured as +/- 1 angstrom in period, +/- 13 ppm in lattice mismatch and +/- 0.5 nm in wavelength across a 2 inch wafer. Good surface morphology, sharp interfaces and excellent growth control have all been demonstrated.

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页码：328 / 332

页数：5

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