GROWTH AND MBMS STUDIES OF REACTION-MECHANISMS FOR INXGA1-XAS CBE

被引：32

作者：

SINGH, NK ^{[1
]}

FOORD, JS ^{[1
]}

SKEVINGTON, PJ ^{[1
]}

DAVIES, GJ ^{[1
]}

机构：

[1] BRITISH TELECOMMUN PLC,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90360-U

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The reaction mechanism involved in the growth of InxGa1-xAs lattice matched to InP by chemical beam epitaxy (CBE) was investigated using growth and modulated beam mass spectrometry studies. Emphasis was placed on elucidating how variations in substrate temperature, indium composition and arsenic overpressure influence growth kinetics and how sensitive changes in experimental conditions bring about deviations in the ideal stoichiometry (In0.53Ga0.47As) required for lattice matching to InP. Our observations indicate that the compositional variations in the InGaAs stoichiometry at high temperatures (> 485-degrees-C) arise because of the changes in the DEG decomposition:desorption branching ratio which is controlled by a temperature- and arsenic pressure-dependent surface population of indium atoms. The low temperature behaviour is governed by the availability of metal surface sites for triethylgallium decomposition which is increased by the presence of surface indium atoms.

引用

页码：33 / 38

页数：6

共 14 条

[1]

AMIN SJ, 1990, BRIT CRYSTALLOGRAPHI

[2] THE INFLUENCE OF GROWTH-CONDITIONS ON THE GROWTH-RATE AND COMPOSITION OF GAAS AND GAINAS ALLOYS GROWN BY CHEMICAL BEAM EPITAXY [J].

ANDREWS, DA ;

DAVIES, GJ .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (06) :3187-3189

[3] SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

DAVIES, GJ ;

SKEVINGTON, PJ ;

SCOTT, EG ;

FRENCH, CL ;

FOORD, JS .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :999-1008

[4]

FITZGERALD EC, UNPUB

[5] SURFACE PROCESSES CONTROLLING GROWTH OF GAXIN1-XAS AND GAXIN1-XP ALLOY-FILMS BY MBE [J].

FOXON, CT ;

JOYCE, BA .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (01) :75-83

[6] SURFACE SEGREGATION OF INDIUM DURING GROWTH OF INGAAS IN CHEMICAL BEAM EPITAXY [J].

IIMURA, Y ;

NAGATA, K ;

AOYAGI, Y ;

NAMBA, S .

JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) :230-233

[7] SUBSTRATE-TEMPERATURE DEPENDENCE OF GAAS, GALNAS, AND GAALAS GROWTH-RATES IN METALORGANIC MOLECULAR-BEAM EPITAXY [J].

KOBAYASHI, N ;

BENCHIMOL, JL ;

ALEXANDRE, F ;

GAO, Y .

APPLIED PHYSICS LETTERS, 1987, 51 (23) :1907-1909

[8] MODULATED-BEAM MASS-SPECTROMETRY STUDIES OF THE MOMBE GROWTH OF (100) GAAS AND IN0.1GA0.9AS [J].

MARTIN, T ;

WHITEHOUSE, CR .

JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) :57-68

[9]

MASEL RI, IN PRESS MATER RES S

[10] SURFACE CHEMICAL PROCESSES IN METAL ORGANIC MOLECULAR-BEAM EPITAXY - GA DEPOSITION FROM TRIETHYLGALLIUM ON GAAS(100) [J].

MURRELL, AJ ;

WEE, ATS ;

FAIRBROTHER, DH ;

SINGH, NK ;

FOORD, JS ;

DAVIES, GJ ;

ANDREWS, DA .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) :4053-4063

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