THE INFLUENCE OF GROWTH-CONDITIONS ON THE GROWTH-RATE AND COMPOSITION OF GAAS AND GAINAS ALLOYS GROWN BY CHEMICAL BEAM EPITAXY

We have studied the effect of source species, substrate temperature, substrate orientation, and group-V overpressure on the growth rate and composition of GaAs and InGaAs alloys grown by chemical beam epitaxy. Our results for GaAs growth rate versus substrate temperature show a significant effect of group-V overpressure on the details of this dependence. The incorporation of gallium from triethylgallium into GaInAs alloys is found to be strongly dependent on temperature and alloy indium concentration, but independent of the source of indium. It is also significantly dependent on group-V overpressure. We could find no effect on growth rate or composition dependence between growth on nominally (100) GaAs and InP substrates, and those cut 2°or 3°off axis.