HETERO-EPITAXIAL SILICON GROWTH ON POLYCRYSTALLINE MOSI2

被引：3

作者：

CAMPISI, GJ

BEVOLO, AJ

SHANKS, HR

SCHMIDT, FA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 08期

关键词：

D O I：

10.1063/1.329447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5043 / 5049

页数：7

共 9 条

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[2] POLYCRYSTALLINE SILICON ON TUNGSTEN SUBSTRATES [J].

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CAMPISI, GJ .

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[4] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .V. NUCLEATION KINETIC MEASUREMENTS ON (100) SURFACES [J].

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[5] GROWTH AND STRUCTURE OF SEMICONDUCTING THIN-FILMS [J].

JOYCE, BA .

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[6] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .3. NUCLEATION RATE MEASUREMENTS AND EFFECT OF OXYGEN ON INITIAL GROWTH BEHAVIOUR [J].

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[7]

MILEK JT, 1968, EPITAXIAL SILICON GA

[8]

PEARSON WB, 1958, LATTICE SPACING STRU, P198

[9]

Sze S. M., 1969, PHYSICS SEMICONDUCTO, P15

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