PREDICTED EFFECTS OF NEUTRON IRRADIATION ON GAAS JUNCTION FIELD EFFECT TRANSISTORS

被引：13

作者：

MCNICHOLS, JL

GINELL, WS

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1970年 / NS17卷 / 02期

关键词：

D O I：

10.1109/TNS.1970.4325654

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：52 / +

页数：1

共 14 条

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AUKERMAN, LW .

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[2]

AUKERMAN LW, 1961, 1960 P INT C SEM PHY, P946

[3] COMPARISON OF NEUTRON RADIATION TOLERANCE OF BIPOLAR AND JUNCTION FIELD EFFECT TRANSISTORS [J].

BUCHANAN, B ;

DOLAN, R ;

ROOSILD, S .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2188-+

[4] INFRARED ABSORPTION IN NEUTRON-IRRADIATED GAAS [J].

BURKIG, VC ;

MCNICHOLS, JL ;

GINELL, WS .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3268-+

[5] EFFECT OF FAST-NEUTRON IRRADIATION ON OPTICAL ATTENUATION IN COMPOUND SEMICONDUCTORS [J].

MCNICHOL.JL ;

HAYES, P ;

GINELL, WS .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) :46-&

[6] THEORY OF ANOMALOUS INFRARED ATTENUATION IN NEUTRON-IRRADIATED COMPOUND SEMICONDUCTORS [J].

MCNICHOLS, JL ;

GINELL, WS .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) :656-+

[7]

MCNICHOLS JL, 1967, B AM PHYS SOC, V12, P889

[8] MAGNETIC AND ELECTRICAL PROPERTIES OF REACTOR-IRRADIATED SILICON [J].

SONDER, E .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1186-1194

[9]

STEIN HJ, 1964, SCR64193

[10]

STEIN HJ, 1969, JUL IEEE C NUCL SPAC

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