RADIOFREQUENCY PLASMA TREATMENT AND THERMAL ANNEALING IN IMPLANTED SI - RAMAN-STUDY

被引：7

作者：

ARTAMONOV, VV

LYSENKO, VS

NAZAROV, AN

NECHIPORUK, BD

STRELCHUK, VV

VALAKH, MY

机构：

[1] Institute of Semiconductors, Academy of Sciences of the Ukrainian Ssr

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 120卷 / 02期

关键词：

D O I：

10.1002/pssa.2211200220

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Raman spectroscopy method is used to study the influence of thermal and rf‐plasma treatments on structural changes in strongly damaged near‐surface layers in SiSiO2 structures implanted with P+ ions. The changes of the dimensions of the microcrystalline regions and the root mean square bond angle fluctuations of SiSi bonds in amorphized regions are evaluated. In addition, elastic energy and the relative contents of crystalline and amorphous phases in the implanted layers under such treatmens are evaluated. It is shown that the rf‐plasma treatment allows to obtain a totally relaxed Si amorphous structure. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：475 / 484

页数：10

共 31 条

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