CHARACTERIZATION OF BLACK GE SELECTIVE ABSORBERS

[1] Barna A., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P109

[2] ANISOTROPIC MICROSTRUCTURE IN EVAPORATED AMORPHOUS GERMANIUM FILMS [J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1372 - &

[3] CUOMO JJ, 1975, APPL PHYS LETT, V26, P557, DOI 10.1063/1.87990

[4] GILBERT LR, 1978, THIN SOLID FILMS, V54, P151

[5] GITTLEMAN JI, 1979, THIN SOLID FILMS, V45, P9

[6] DETERMINATION OF ARGON CONTENT OF SPUTTERED SIO2 FILMS BY X-RAY FLUORESCENCE [J]. THIN SOLID FILMS, 1969, 3 (01) : 35 - +

[7] KRISHNASWAMY SV, UNPUBLISHED

[8] STRUCTURE-COMPOSITION VARIATION IN RF-SPUTTERED FILMS OF GE CAUSED BY PROCESS PARAMETER CHANGES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (05): : 1060 - 1065

[9] MESSIER R, UNPUBLISHED

[10] MOVCHAN BA, 1969, PHYS METALS METALLOG, V28, P83

[1] Barna A., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P109

[2] ANISOTROPIC MICROSTRUCTURE IN EVAPORATED AMORPHOUS GERMANIUM FILMS [J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1372 - &

[3] CUOMO JJ, 1975, APPL PHYS LETT, V26, P557, DOI 10.1063/1.87990

[4] GILBERT LR, 1978, THIN SOLID FILMS, V54, P151

[5] GITTLEMAN JI, 1979, THIN SOLID FILMS, V45, P9

[6] DETERMINATION OF ARGON CONTENT OF SPUTTERED SIO2 FILMS BY X-RAY FLUORESCENCE [J]. THIN SOLID FILMS, 1969, 3 (01) : 35 - +

[7] KRISHNASWAMY SV, UNPUBLISHED

[8] STRUCTURE-COMPOSITION VARIATION IN RF-SPUTTERED FILMS OF GE CAUSED BY PROCESS PARAMETER CHANGES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (05): : 1060 - 1065

[9] MESSIER R, UNPUBLISHED

[10] MOVCHAN BA, 1969, PHYS METALS METALLOG, V28, P83