MODULATION OF SPACE-CHARGE-LIMITED CURRENT FLOW IN INSULATED-GATE FIELD-EFFECT TETRODES

被引：33

作者：

RICHMAN, P

机构：

[1] Bayside Research Center, General Tele phone & Electronics Laboratories, Inc., Bayside, N.Y

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1969年 / ED16卷 / 09期

关键词：

D O I：

10.1109/T-ED.1969.16851

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical characteristics of n-channel depletion-type and p-channel enhancement-type space-charge-limited tetrodes are presented. The devices are derived from the MOSFET structure and are fabricated on nearly intrinsic silicon substrates with very small channel lengths. In both structures, the current flowing between drain and source can be modulated by either of two high-impe-dance control terminals. The dominant conduction mechanism is space-charge-limited current flow, and the observed current-voltage characteristics of each device follow the Mott and Gurney relationship at high current levels. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：759 / +

页数：1

共 17 条

[1] THEORY OF INSULATED-GATE FIELD-EFFECT TRANSISTORS NEAR AND BEYOND PINCH-OFF [J].