PHOTON-ASSISTED NITRIDATION OF GAAS(100) AT LIQUID-NITROGEN TEMPERATURE

被引：16

作者：

RUCKMAN, MW

CAO, JM

PARK, KT

GAO, YL

WICKS, GW

机构：

[1] UNIV ROCHESTER,DEPT PHYS & ASTRON,ROCHESTER,NY 14627

[2] UNIV ROCHESTER,INST OPT,ROCHESTER,NY 14627

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 07期

关键词：

D O I：

10.1063/1.105256

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that nonmonochromatic synchrotron radiation promotes reactions at liquid-nitrogen temperature (approximately 80 K) between NH3 and molecular beam epitaxy grown GaAs(100) which produces a thin nitride film. The photon-assisted reaction causes changes in the valence band and core level photoemission spectra from GaAs(100) which are similar to those reported for nitridation by a nitrogen plasma.

引用

页码：849 / 851

页数：3

共 26 条

[21]

Sze S. M., 1981, PHYSICS SEMICONDUCTO, P245

[22] INTERACTIONS OF ION-BEAMS WITH SURFACES - REACTIONS OF NITROGEN WITH SILICON AND ITS OXIDES [J].