A 2-WATT, 8-14-GHZ HBT POWER MMIC WITH 20-DB GAIN AND GREATER-THAN-40-PERCENT POWER-ADDED EFFICIENCY

被引：3

作者：

ALI, F

GUPTA, A

SALIB, M

VEASEL, BW

DAWSON, DE

机构：

[1] Advanced Technology Division, Westinghouse Electric Corporation, Baltimore, MD

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1994年 / 42卷 / 12期

关键词：

Monolithic microwave integrated circuits;

D O I：

10.1109/22.339808

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-stage, 8-14 GHz high-efficiency AlGaAs/GaAs HBT MMIC power amplifier has been designed and tested. At 7 V collector bias, this common-emitter monolithic amplifier has achieved 20 dB gain, 33 dBm (CW) output power, and >40% power-added efficiency over the 8-14 GHz band. The amplifier is designed for 25 Ohm input and output impedance, and all the matching networks, as well as biasing circuits, are contained within this HBT MMIC. To our knowledge, this is the highest efficiency, the highest gain, and the highest output power reported for any monolithic power amplifier covering a 6 GHz bandwidth in the X-Ku band.

引用

页码：2635 / 2641

页数：7

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