PHOTO-LUMINESCENCE STUDY OF MELT GROWN INP

[1] ANTYPAS GA, 1977, 33B I PHYS C SER, pCH1

[2] BACHMAN KJ, 1979, J ELECTRON MATER, V3, P279

[3] BARTHRUFF D, 1979, J ELECTRON MATER, V8, P485, DOI 10.1007/BF02652400

[4] REPRODUCIBLE PREPARATION OF TWIN-FREE INP CRYSTALS USING THE LEC TECHNIQUE [J]. MATERIALS RESEARCH BULLETIN, 1980, 15 (01) : 63 - 72

[5] CONTROL OF SUBSTRATE DEGRADATION IN INP LPE GROWTH WITH PH3 PARTIAL-PRESSURE [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 46 (02) : 300 - 303

[6] RELATION OF LAUER-FONG FORMULA TO SCC MODEL - APPLICATION TO SM+2 5D REVERSIBLE 5D CROSSOVERS [J]. JOURNAL OF CHEMICAL PHYSICS, 1978, 69 (09) : 4171 - 4184

[7] INP GROWTH AND PROPERTIES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (05) : 647 - 657

[8] LIQUID-PHASE EPITAXY OF INP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) : 1208 - 1212

[9] EVIDENCE FOR LUMINESCENCE INVOLVING ARSENIC VACANCY-ACCEPTOR CENTERS IN P-TYPE GAAS [J]. PHYSICAL REVIEW, 1969, 180 (03): : 827 - &

[10] JOYCE BD, 1970, S GAAS, P57

[1] ANTYPAS GA, 1977, 33B I PHYS C SER, pCH1

[2] BACHMAN KJ, 1979, J ELECTRON MATER, V3, P279

[3] BARTHRUFF D, 1979, J ELECTRON MATER, V8, P485, DOI 10.1007/BF02652400

[4] REPRODUCIBLE PREPARATION OF TWIN-FREE INP CRYSTALS USING THE LEC TECHNIQUE [J]. MATERIALS RESEARCH BULLETIN, 1980, 15 (01) : 63 - 72

[5] CONTROL OF SUBSTRATE DEGRADATION IN INP LPE GROWTH WITH PH3 PARTIAL-PRESSURE [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 46 (02) : 300 - 303

[6] RELATION OF LAUER-FONG FORMULA TO SCC MODEL - APPLICATION TO SM+2 5D REVERSIBLE 5D CROSSOVERS [J]. JOURNAL OF CHEMICAL PHYSICS, 1978, 69 (09) : 4171 - 4184

[7] INP GROWTH AND PROPERTIES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (05) : 647 - 657

[8] LIQUID-PHASE EPITAXY OF INP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) : 1208 - 1212

[9] EVIDENCE FOR LUMINESCENCE INVOLVING ARSENIC VACANCY-ACCEPTOR CENTERS IN P-TYPE GAAS [J]. PHYSICAL REVIEW, 1969, 180 (03): : 827 - &

[10] JOYCE BD, 1970, S GAAS, P57