RELIABILITY OF ALUMINUM-FREE 808 NM HIGH-POWER LASER-DIODES WITH UNCOATED MIRRORS

被引：15

作者：

ELIASHEVICH, I

DIAZ, J

YI, H

WANG, L

RAZEGHI, M

机构：

[1] Center for Quantum Devices, Northwestern University, Evanston

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 23期

关键词：

D O I：

10.1063/1.113404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The reliability of uncoated InGaAsP/GaAs high-power diode lasers emitting at 808 nm wavelength has been studied. 47 W of quasicontinuous wave output power (pulse width 200 μs, frequency 20 Hz) have been obtained from a 1-cm-wide laser bar. A single-stripe diode without mirror coating has been life tested at 40°C for emitting power of 800 mW continuous wave (cw) and showed no noticeable degradation and no change of the lasing wavelength after 6000 h of operation.© 1995 American Institute of Physics.

引用

页码：3087 / 3089

页数：3

共 8 条

[1] THEORETICAL INVESTIGATION OF MINORITY-CARRIER LEAKAGES OF HIGH-POWER 0.8-MU-M INGAASP/INGAP/GAAS LASER-DIODES [J].