DEGRADATION OF III-V OPTO-ELECTRONIC DEVICES

[1] HIGH-EFFICIENCY LONG-LIVED GAAIAS LEDS FOR FIBER-OPTICAL COMMUNICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (07) : 990 - 994

[2] INTERDEPENDENCE OF STRAIN, PRECIPITATION, AND DISLOCATION FORMATION IN EPITAXIAL SE-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3277 - 3287

[3] ABRAHAMS MS, 1971, PHILOS MAG A, V23, P809

[4] CHANNELED-SUBSTRATE PLANAR STRUCTURE (ALGA)AS INJECTION-LASERS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (12) : 649 - 651

[5] BARRAFF GA, 1985, PHYS REV LETT, V55, P1327

[6] NATURE, ORIGIN AND EFFECT OF DISLOCATIONS IN EPITAXIAL SEMICONDUCTOR LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 407 - 425

[7] THEORY OF DEEP VACANCY LEVELS IN IN1-YGAYAS1-XPX [J]. JOURNAL DE PHYSIQUE, 1982, 43 (01): : 181 - 183

[8] CATHODOLUMINESCENCE EVALUATION OF DARK SPOT DEFECTS IN INP/INGAASP LIGHT-EMITTING-DIODES [J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 555 - 557

[9] DEFECT STRUCTURE IN III-V-COMPOUND SEMICONDUCTORS - GENERATION AND EVOLUTION OF DEFECT STRUCTURES IN INGAAS AND INGAASP EPITAXIAL LAYER GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3441 - 3447

[10] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 1042 - 1044

[1] HIGH-EFFICIENCY LONG-LIVED GAAIAS LEDS FOR FIBER-OPTICAL COMMUNICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (07) : 990 - 994

[2] INTERDEPENDENCE OF STRAIN, PRECIPITATION, AND DISLOCATION FORMATION IN EPITAXIAL SE-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3277 - 3287

[3] ABRAHAMS MS, 1971, PHILOS MAG A, V23, P809

[4] CHANNELED-SUBSTRATE PLANAR STRUCTURE (ALGA)AS INJECTION-LASERS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (12) : 649 - 651

[5] BARRAFF GA, 1985, PHYS REV LETT, V55, P1327

[6] NATURE, ORIGIN AND EFFECT OF DISLOCATIONS IN EPITAXIAL SEMICONDUCTOR LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 407 - 425

[7] THEORY OF DEEP VACANCY LEVELS IN IN1-YGAYAS1-XPX [J]. JOURNAL DE PHYSIQUE, 1982, 43 (01): : 181 - 183

[8] CATHODOLUMINESCENCE EVALUATION OF DARK SPOT DEFECTS IN INP/INGAASP LIGHT-EMITTING-DIODES [J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 555 - 557

[9] DEFECT STRUCTURE IN III-V-COMPOUND SEMICONDUCTORS - GENERATION AND EVOLUTION OF DEFECT STRUCTURES IN INGAAS AND INGAASP EPITAXIAL LAYER GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3441 - 3447

[10] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 1042 - 1044