LIFETIME EXTENSION OF UNCOATED ALGAAS SINGLE-QUANTUM-WELL LASERS BY HIGH-POWER BURN-IN IN INERT ATMOSPHERES

被引：7

作者：

TANG, WC ^{[1
]}

ALTENDORF, EH ^{[1
]}

ROSEN, HJ ^{[1
]}

WEBB, DJ ^{[1
]}

VETTIGER, P ^{[1
]}

机构：

[1] IBM CORP,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 02期

关键词：

SEMICONDUCTOR LASERS; RELIABILITY;

D O I：

10.1049/el:19940097

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The facet temperature rise of uncoated A1GaAs single-quantum-well lasers as a function of time at constant-current is observed to be higher when operated in air than in inert atmospheres such as helium and nitrogen. What is unexpected is that the process of burning-in uncoated A1GaAs lasers at high output power in inert atmospheres for a short time is shown to improve their subsequent operational lifetime and reliability in air. Lifetime extension of these uncoated A1GaAs single quantum well lasers by a factor as high as 750 has been observed.

引用

页码：143 / 145

页数：3

共 8 条

[1] MAPPING OF LOCAL TEMPERATURES ON MIRRORS OF GAAS/ALGAAS LASER-DIODES [J].