OPTICAL EVIDENCE FOR INTERFACE ELECTRONIC STATES AT AG/SI INTERFACES

被引：15

作者：

BORENSZTEIN, Y

ALAMEH, R

机构：

[1] Laboratoire d'Optique des Solides, VA CNRS 781, Université P. et M. Curie, 75252 Paris Cedex 05

来源：

SURFACE SCIENCE | 1992年 / 274卷 / 01期

关键词：

D O I：

10.1016/0039-6028(92)90093-L

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ag/Si(111)-7 x 7, Ag/Si(100)-2 x 1 and (square-root 3 x square-root 3)R30-degrees-Ag/Si(111) have been studied by surface reflectance spectroscopy. In the three cases, we observe an optical absorption at 2.3 eV, increasing with the Ag coverage up to saturation values, which is independent of the Ag/Si structure; it is due to optical transitions involving new electronic states. These states, not observed by photoemission spectroscopy in the first two former cases, are interpreted as localized interface electronic states corresponding to the covalent bonding between Ag and Si atoms, giving a semiconductor character to the three interfaces.

引用

页码：L509 / L514

页数：6

共 27 条

[21] LOCAL ELECTRON-STATES AND SURFACE GEOMETRY OF SI(111)-(SQUARE-ROOT 3 X SQUARE-ROOT 3)AG [J].