CHALCOPYRITE CUGAXIN1-XSE2 SEMICONDUCTING THIN-FILMS PRODUCED BY RADIO-FREQUENCY SPUTTERING

被引：11

作者：

HERNANDEZROJAS, JL

LUCIA, ML

MARTIL, I

SANTAMARIA, J

GONZALEZDIAZ, G

SANCHEZQUESADA, F

机构：

[1] Departamento de Electricidad y Electrónica, Facultad de Ciencias Físicas, Universidad Complutense

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 15期

关键词：

D O I：

10.1063/1.107140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CuGaxIn1-xSe2 thin films have been deposited by rf sputtering from three targets with different (Ga,In) content (x = 0.25, x = 0.5, and x = 0.75). A structural, compositional, optical, and electrical study has been carried out for films grown at substrates temperatures higher than 350-degrees-C. We have successfully obtained chalcopyrite single phase stoichiometric films. Very sharp absorption edges are obtained, with band gaps of 1.12, 1.35, and 1.51 eV for x = 0, x = 0.5, and x = 0.75, respectively.

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页码：1875 / 1877

页数：3

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