FABRICATION OF INGAAS RIDGE QUANTUM WIRES BY SELECTIVE MOLECULAR-BEAM EPITAXY AND THEIR CHARACTERIZATION

被引：16

作者：

FUJIKURA, H ^{[1
]}

HASAGAWA, H ^{[1
]}

机构：

[1] HOKKAIDO UNIV,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00774-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InGaAs/InAlAs ridge quantum wires were successfully fabricated by selective molecular beam epitaxy (MBE) for the first time. Prior to wire fabrication, detailed data on selective growth characteristics were taken by using test structures. Then, triangular shaped InGaAs ridge quantum wires with a width of 300 Angstrom were fabricated, using the selectivity data. Photoluminescence (PL) measurements detected a strong and narrow peak from the wires which showed a blue shift of 159 meV with respect to the InGaAs band-gap. This value agrees excellently with the calculation.

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页码：327 / 331

页数：5

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