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- [1] INCORPORATION RATES OF GALLIUM AND ALUMINUM ON GAAS DURING MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE TEMPERATURES[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2508 - 2510FISCHER, RKLEM, JDRUMMOND, TJTHORNE, REKOPP, WMORKOC, HCHO, AY
- [2] CATHODOLUMINESCENCE SYSTEM FOR A SCANNING ELECTRON-MICROSCOPE USING AN OPTICAL FIBER FOR LIGHT COLLECTION[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1989, 60 (02) : 226 - 230HOENK, MEVAHALA, KJ
- [3] MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS SUPERLATTICE HETEROSTRUCTURES ON NONPLANAR SUBSTRATES[J]. APPLIED PHYSICS LETTERS, 1987, 50 (06) : 347 - 349KAPON, ETAMARGO, MCHWANG, DM
- [4] PATTERNED QUANTUM WELL SEMICONDUCTOR INJECTION-LASER GROWN BY MOLECULAR-BEAM EPITAXY[J]. APPLIED PHYSICS LETTERS, 1988, 52 (08) : 607 - 609KAPON, EHARBISON, JPYUN, CPSTOFFEL, NG
- [5] PATTERNED GAAS/ALGAAS SUPERLATTICE HETEROSTRUCTURES BY EPITAXIAL-GROWTH ON NONPLANAR GAAS SUBSTRATES[J]. SUPERLATTICES AND MICROSTRUCTURES, 1988, 4 (03) : 297 - 301KAPON, EHWANG, DMBHAT, RTAMARGO, MC
- [6] DEPENDENCE OF THE ALXGA1-XAS BAND EDGE ON ALLOY COMPOSITION BASED ON THE ABSOLUTE MEASUREMENT OF X[J]. APPLIED PHYSICS LETTERS, 1987, 51 (07) : 505 - 507KUECH, TFWOLFORD, DJPOTEMSKI, RBRADLEY, JAKELLEHER, KHYAN, DFARRELL, JPLESSER, PMSPOLLAK, FH
- [7] LATERAL P-N-JUNCTION FORMATION IN GAAS MOLECULAR-BEAM EPITAXY BY CRYSTAL PLANE DEPENDENT DOPING[J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1309 - 1311MILLER, DL
- [8] SELF-MASKING SELECTIVE EPITAXY BY MOLECULAR-BEAM METHOD[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 940 - 942NAGATA, STANAKA, T
- [9] SELF-ALIGNED 3-DIMENSIONAL GA1-XALXAS STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY[J]. APPLIED PHYSICS LETTERS, 1977, 30 (10) : 503 - 505NAGATA, STANAKA, TFUKAI, M
- [10] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS[J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 100 - 102NEAVE, JHDOBSON, PJJOYCE, BAZHANG, J