GROWTH OF STRAINED INGAAS/GAAS QUANTUM-WELLS AND INDEX GUIDED INJECTION-LASERS OVER NONPLANAR SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：10

作者：

ARENT, DJ

GALEUCHET, YD

NILSSON, S

MEIER, HP

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.584841

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：145 / 148

页数：4

共 13 条

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[2] INDIUM ADATOM MIGRATION DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED INGAAS/GAAS SINGLE QUANTUM WELLS [J].

ARENT, DJ ;

NILSSON, S ;

GALEUCHET, YD ;

MEIER, HP ;

WALTER, W .

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[3]

ARENT DJ, UNPUB APPL PHYS LETT

[4] COMPOSITIONAL MODULATION IN ALXGA1-XAS EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON THE (111) FACETS OF GROOVES IN A NONPLANAR SUBSTRATE [J].

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NIEH, CW ;

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APPLIED PHYSICS LETTERS, 1989, 55 (01) :53-55

[5] CATHODOLUMINESCENCE MEASUREMENT OF AN ORIENTATION DEPENDENT ALUMINUM CONCENTRATION IN ALXGA1-XAS EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON A NONPLANAR SUBSTRATE [J].

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VAHALA, KJ .

APPLIED PHYSICS LETTERS, 1989, 54 (14) :1347-1349

[6] MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS SUPERLATTICE HETEROSTRUCTURES ON NONPLANAR SUBSTRATES [J].

KAPON, E ;

TAMARGO, MC ;

HWANG, DM .

APPLIED PHYSICS LETTERS, 1987, 50 (06) :347-349

[7] THE NATURE OF MOLECULAR-BEAM EPITAXIAL-GROWTH EXAMINED VIA COMPUTER-SIMULATIONS [J].

MADHUKAR, A ;

GHAISAS, SV .

CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 14 (01) :1-130

[8] MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS QUANTUM WELLS ON CHANNELED SUBSTRATES [J].

MEIER, HP ;

VANGIESON, E ;

WALTER, W ;

HARDER, C ;

KRAHL, M ;

BIMBERG, D .

APPLIED PHYSICS LETTERS, 1989, 54 (05) :433-435

[9] PROBLEMS RELATED TO THE FORMATION OF LATERAL P-N-JUNCTIONS ON CHANNELED SUBSTRATE (100) GAAS FOR LASERS [J].

MEIER, HP ;

BROOM, RF ;

EPPERLEIN, PW ;

VANGIESON, E ;

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JACKEL, H ;

WALTER, W ;

WEBB, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :692-695

[10] GA ADATOM MIGRATION OVER A NONPLANAR SUBSTRATE DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS/ALGAAS HETEROSTRUCTURES [J].

NILSSON, S ;

VANGIESON, E ;

ARENT, DJ ;

MEIER, HP ;

WALTER, W ;

FORSTER, T .

APPLIED PHYSICS LETTERS, 1989, 55 (10) :972-974

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