RAPID OXIDATION VIA ADSORPTION OF OXYGEN IN LASER-INDUCED AMORPHOUS-SILICON

被引：33

作者：

LIU, YS

CHIANG, SW

BACON, F

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 12期

关键词：

D O I：

10.1063/1.92246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1005 / 1007

页数：3

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共 11 条

[1] THE GROWTH AND CHARACTERIZATION OF VERY THIN SILICON DIOXIDE FILMS
ADAMS, AC
SMITH, TE
CHANG, CC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : 1787 - 1794
[2] HESS LD, 1980, P S LASER ELECTRON B, P562
[3] INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM
KAISER, W
KECK, PH
LANGE, CF
[J]. PHYSICAL REVIEW, 1956, 101 (04): : 1264 - 1268
[4] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS
KENNEDY, EF
CSEPREGI, L
MAYER, JW
SIGMON, TW
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4241 - 4246
[5] PICOSECOND LASER-INDUCED MELTING AND RESOLIDIFICATION MORPHOLOGY ON SI
LIU, PL
YEN, R
BLOEMBERGEN, N
HODGSON, RT
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 864 - 866
[6] HIGH-EFFICIENCY HIGH-POWER COHERENT UV GENERATION AT 266 NM IN 90 DEGREES PHASE-MATCHED DEUTERATED KDP
LIU, YS
JONES, WB
CHERNOCH, JP
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 32 - 34
[7] LIU YS, 1981, 1980 MAT RES SOC ANN
[8] FORMATION OF A NONCRYSTALLINE PHASE IN ALUMINUM IRRADIATED WITH A PULSED RUBY-LASER
MAZZOLDI, P
DELLAMEA, G
BATTAGLIN, G
MIOTELLO, A
SERVIDORI, M
BACCI, D
JANNITTI, E
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (02) : 88 - 91
[9] PLISKIN WA, 1973, 2ND INT S SIL MAT SC, P506
[10] SPAEPEN F, 1979, 1978 P LAS SOL INT L, P73