PSEUDO-JAHN-TELLER EFFECT FOR DISTORTIONS INVOLVING OXYGEN AND NITROGEN IMPURITIES IN SILICON

被引：10

作者：

ANDERSON, FG

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.39.5392

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5392 / 5396

页数：5

共 12 条

[1] DEEP-LEVEL NITROGEN CENTERS IN LASER-ANNEALED ION-IMPLANTED SILICON [J].

BROWER, KL .

PHYSICAL REVIEW B, 1982, 26 (11) :6040-6052

[2] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J].

CORBETT, JW ;

WATKINS, GD ;

CHRENKO, RM ;

MCDONALD, RS .

PHYSICAL REVIEW, 1961, 121 (04) :1015-&

[3] THEORY OF OFF-CENTER IMPURITIES IN SILICON - SUBSTITUTIONAL NITROGEN AND OXYGEN [J].

DELEO, GG ;

FOWLER, WB ;

WATKINS, GD .

PHYSICAL REVIEW B, 1984, 29 (06) :3193-3207

[4]

DELEO GG, COMMUNICATION

[5] VIBRONIC MODEL FOR RELAXED EXCITED-STATE OF F-CENTER .1. GENERAL SOLUTION [J].

HAM, FS .

PHYSICAL REVIEW B, 1973, 8 (06) :2926-2944

[6]

HAM FS, 1972, ELECTRON PARAMAGNETI, P1

[7] Stability of polyatomic molecules in degenerate electronic states. I. Orbital degeneracy [J].

Jahn, HA ;

Teller, E .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1937, 161 (A905) :220-235

[8] A1-T2 SPLITTING FOR SUBSTITUTIONAL NITROGEN IN DIAMOND [J].

LANNOO, M .

PHYSICAL REVIEW B, 1982, 25 (04) :2987-2990

[9] STUDIES OF THE JAHN TELLER EFFECT .1. A SURVEY OF THE STATIC PROBLEM [J].

OPIK, U ;

PRYCE, MHL .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 238 (1215) :425-447

[10] JAHN-TELLER INSTABILITY WITH ACCIDENTAL DEGENERACY [J].

STONEHAM, AM ;

LANNOO, M .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (07) :1769-&

← 1 2 →