PREPARATION AND ELECTRICAL PROPERTIES OF AL-ALN-SI STRUCTURES

[1] MAGNETIC LAG AND ANISOTROPY DUE TO INTERSTITIALS IN FCC FERROMAGNETIC ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (03) : 1526 - &

[2] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +

[3] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +

[4] KUISL M, 1969, Z ANGEW PHYSIK, V28, P50

[5] MIRSCH S, TO BE PUBLISHED

[6] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +

[7] WETH OVD, 1971, THESIS TH ILMENAU

[8] LIMITATIONS OF MOS CAPACITANCE METHOD FOR DETERMINATION OF SEMICONDUCTOR SURFACE PROPERTIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) : 179 - +

[1] MAGNETIC LAG AND ANISOTROPY DUE TO INTERSTITIALS IN FCC FERROMAGNETIC ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (03) : 1526 - &

[2] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +

[3] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +

[4] KUISL M, 1969, Z ANGEW PHYSIK, V28, P50

[5] MIRSCH S, TO BE PUBLISHED

[6] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +

[7] WETH OVD, 1971, THESIS TH ILMENAU

[8] LIMITATIONS OF MOS CAPACITANCE METHOD FOR DETERMINATION OF SEMICONDUCTOR SURFACE PROPERTIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) : 179 - +