A DESIGN TECHNIQUE FOR A 60-GHZ-BANDWIDTH DISTRIBUTED BASEBAND AMPLIFIER IC MODULE

被引：34

作者：

SHIBATA, T ^{[1
]}

KIMURA, S ^{[1
]}

KIMURA, H ^{[1
]}

IMAI, Y ^{[1
]}

UMEDA, Y ^{[1
]}

AKAZAWA, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, TRANSMISS SYST LABS, YOKOSUKA, KANAGAWA 23803, JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1994年 / 29卷 / 12期

关键词：

D O I：

10.1109/4.340428

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A dc-60 GHz, 9 dB distributed amplifier IC module is fabricated with 0.15 mu m InAlAs/InGaAs low-noise HEMT's with 155 GHz f(T) and 234 GHz f(max). The device is mounted in a metal package with 1.8 mm coaxial cable signal interfaces, The package is specially designed using three-dimensional electromagnetic field analyses, resulting in very flat frequency characteristics of the module within 1.5 dB gain ripples over the entire bandwidth, A multichip module loaded with two amplifier IC's in cascade is also fabricated, and operates at a 17.5 dB gain from 60 kHz to 48 GHz, The 1 dB gain compression output power is about 5 dBm for both modules, The noise figure of the single-chip module is approximately 4 dB over a 10-40 GHz frequency range.

引用

页码：1537 / 1544

页数：8

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