HIGH-POWER 875-NM AL-FREE LASER-DIODES

被引：16

作者：

PLANO, WE

MAJOR, JS

WELCH, DF

机构：

[1] SDL, Inc., San Jose, CA, 95134, 1365

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 04期

关键词：

D O I：

10.1109/68.281797

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented on Al-free InGaAsP-GaAs single quantum well laser diodes operating at 875 nm. Total output powers in excess of 4 W are achieved from a 100 mum broad area gain-guided device. Threshold currents under 200 A/cm2 are reported for diodes operated continuous wave (cw) at room temperature (20-degrees-C).

引用

收藏

页码：465 / 467

页数：3

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