BURIED HETEROSTRUCTURE 0.98 MU-M INGAAS/INGAASP/INGAP LASERS

被引：11

作者：

VAIL, EC ^{[1
]}

LIM, SF ^{[1
]}

WU, YA ^{[1
]}

FRANCIS, DA ^{[1
]}

CHANGHASNAIN, CJ ^{[1
]}

BHAT, R ^{[1
]}

CANEAU, C ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 16期

关键词：

D O I：

10.1063/1.110577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication and comparison of buried heterostructure and ridge waveguide 0.98 mum lasers with strained InGaAs quantum wells, stepped InGaAsP confinement layers, and InGaP claddings. The buried heterostructure (BH) lasers exhibit superior performance with lower threshold and higher power. We demonstrate a BH laser with 4.4 mA threshold current, 77% differential quantum efficiency, 196 mW of output power, and 150 K characteristic temperature. No catastrophic optical damage is observed on the laser facets, although the facets were not coated or treated.

引用

收藏

页码：2183 / 2185

页数：3

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