LOW-THRESHOLD 0.98-MU-M ALUMINUM-FREE STRAINED-QUANTUM-WELL INGAAS/INGAASP/INGAP LASERS

Aluminium-free strained-quantum-well In0.2Ga0.8As lasers employing novel two-stepped InGaAsP confinement layers and InGaP cladding layers on a GaAs substrate are demonstrated for the first time. Threshold current density as low as 58 A/cm2 is obtained with broad stripe lasers. This threshold current density is, to the authors' knowledge, the lowest reported for 0.98 mum lasers grown by organic chemical vapour deposition.