HIGH-POWER INGAAS-GAAS STRAINED QUANTUM-WELL LASERS WITH INGAP CLADDING LAYERS ON P-TYPE GAAS SUBSTRATES

We report device results from channel guide InGaAs-GaAs strained quantum well lasers with In0.49Ga0.51P cladding layers (lambda(L) = 980 nm). Channel guide lasers are demonstrated with a new current blocking scheme using a p-n-p InGaP junction on a p+-GaAs substrate. The laser structure is grown by metalorganic vapor phase epitaxy on the channeled n-InGaP layer. The reverse biased p-n-p InGaP junction is shown to be effective in preserving the current blocking properties for InGaAs-GaAs-InGaP lasers. The uncoated lasers show cw laser thresholds of 11 mA at RT and high output powers of 125 mW.