ORDERING EFFECT ON THE PERFORMANCE OF GA0.5IN0.5P VISIBLE LIGHT-EMITTING-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：9

作者：

HORNG, RH

LEE, MK

机构：

[1] Institute of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 03期

关键词：

D O I：

10.1063/1.351220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ordering effect on the performance of Ga0.5In0.5P visible light-emitting diodes (LEDs) has been reported. The GaInP LEDs were fabricated on GaAs substrates at 675 and 730-degrees-C by metalorganic chemical vapor deposition, with ordered and disordered structures. A sample with an ordered structure shows anomalous device performance, where emitting wavelength change, low light intensity, and early saturation were observed from the current-light intensity relationship. From the current-voltage measurement, it was found that the sample with ordered structure also yields an inferior diode performance. These phenomena could be due to the existence of antiphase boundaries in the ordered structures. The antiphase boundaries can act as generation-recombination centers and result in the anomalous behavior of the ordered GaInP LED.

引用

页码：1513 / 1516

页数：4

共 11 条

[1] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE
GOMYO, A
KOBAYASHI, K
KAWATA, S
HINO, I
SUZUKI, T
YUASA, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 367 - 373
[2] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY
GOMYO, A
SUZUKI, T
KOBAYASHI, K
KAWATA, S
HINO, I
YUASA, T
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 673 - 675
[3] ORDERED STRUCTURE IN OMVPE-GROWN GA0.5IN0.5P
KONDOW, M
KAKIBAYASHI, H
MINAGAWA, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 88 (02) : 291 - 296
[4] MATSUNAMI H, 1988, MATER RES SOC S P, V116, P325
[5] DIRECT OBSERVATION OF ORDERING IN (GAIN)P
MCKERNAN, S
DECOOMAN, BC
CARTER, CB
BOUR, DP
SHEALY, JR
[J]. JOURNAL OF MATERIALS RESEARCH, 1988, 3 (03) : 406 - 409
[6] THEORY OF SILICON SUPER-LATTICES - ELECTRONIC-STRUCTURE AND ENHANCED MOBILITY
MORIARTY, JA
KRISHNAMURTHY, S
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 1892 - 1902
[7] NITROGEN TRAP BOUND-STATES IN IN1-XGAXP
NELSON, RJ
HOLONYAK, N
[J]. SOLID STATE COMMUNICATIONS, 1976, 20 (06) : 549 - 551
[8] OBA Y, 1986, J CRYST GROWTH, V77, P374
[9] BAND-GAP ENERGY ANOMALY AND SUBLATTICE ORDERING IN GAINP AND ALGAINP GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
SUZUKI, T
GOMYO, A
IIJIMA, S
KOBAYASHI, K
KAWATA, S
HINO, I
YUASA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (11): : 2098 - 2106
[10] P-TYPE DOPING EFFECTS ON BAND-GAP ENERGY FOR GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
SUZUKI, T
GOMYO, A
HINO, I
KOBAYASHI, K
KAWATA, S
IIJIMA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08): : L1549 - L1552

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