NITROGEN TRAP BOUND-STATES IN IN1-XGAXP

[1] RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4075 - &

[2] ISOELECTRONIC TRAP TRANSITIONS IN GAAS-1-X PARA X-N IN REGION OF RESONANT ENHANCEMENT (ENNEGAMMA EGAMMA 0.3 LESS THAN X LESS THAN 0.4) [J]. SOLID STATE COMMUNICATIONS, 1973, 12 (06) : 489 - 493

[3] LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF LASER-QUALITY (100) IN1-XGAXP [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 154 - 165

[4] PUMPING OF GAAS1-XPX - N(AT 77 DEGREES K, FOR X LESS THAN OR EQUAL TO 0.53) BY AN ELECTRON-BEAM FROM A GAS PLASMA [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) : 5517 - 5521

[5] SPONTANEOUS AND STIMULATED PHOTOLUMINESCENCE ON NITROGEN A-LINE AND NN-PAIR LINE TRANSITIONS IN GAAS1-XPX-N [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4148 - &

[6] DIRECT STUDY OF NATURE OF NITROGEN BOUND-STATES IN GAAS1-XPX-N [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (06) : 375 - 378

[7] KLEIMAN GG, UNPUBLISHED DATA

[8] CRYSTAL AND LUMINESCENCE PROPERTIES OF CONSTANT-TEMPERATURE LIQUID-PHASE-EXPITAXIAL IN 1-XGAXP (X - 0.7) GROWN ON (100) GAAS1-XPX (X - 0.4) [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (11) : 5035 - 5040

[9] EXCITON ABSORPTION, PHOTOLUMINESCENCE AND BAND-STRUCTURE OF N-FREE AND N-DOPED IN-1-XGA-XP [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (06) : 629 - 637

[10] PRESSURE EXPERIMENT DETERMINATION OF DIRECT-INDIRECT TRANSITION IN QUATERNARY IN1-XGAXP1-ZASZ [J]. SOLID STATE COMMUNICATIONS, 1976, 18 (03) : 321 - 325

[1] RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4075 - &

[2] ISOELECTRONIC TRAP TRANSITIONS IN GAAS-1-X PARA X-N IN REGION OF RESONANT ENHANCEMENT (ENNEGAMMA EGAMMA 0.3 LESS THAN X LESS THAN 0.4) [J]. SOLID STATE COMMUNICATIONS, 1973, 12 (06) : 489 - 493

[3] LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF LASER-QUALITY (100) IN1-XGAXP [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 154 - 165

[4] PUMPING OF GAAS1-XPX - N(AT 77 DEGREES K, FOR X LESS THAN OR EQUAL TO 0.53) BY AN ELECTRON-BEAM FROM A GAS PLASMA [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) : 5517 - 5521

[5] SPONTANEOUS AND STIMULATED PHOTOLUMINESCENCE ON NITROGEN A-LINE AND NN-PAIR LINE TRANSITIONS IN GAAS1-XPX-N [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4148 - &

[6] DIRECT STUDY OF NATURE OF NITROGEN BOUND-STATES IN GAAS1-XPX-N [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (06) : 375 - 378

[7] KLEIMAN GG, UNPUBLISHED DATA

[8] CRYSTAL AND LUMINESCENCE PROPERTIES OF CONSTANT-TEMPERATURE LIQUID-PHASE-EXPITAXIAL IN 1-XGAXP (X - 0.7) GROWN ON (100) GAAS1-XPX (X - 0.4) [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (11) : 5035 - 5040

[9] EXCITON ABSORPTION, PHOTOLUMINESCENCE AND BAND-STRUCTURE OF N-FREE AND N-DOPED IN-1-XGA-XP [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (06) : 629 - 637

[10] PRESSURE EXPERIMENT DETERMINATION OF DIRECT-INDIRECT TRANSITION IN QUATERNARY IN1-XGAXP1-ZASZ [J]. SOLID STATE COMMUNICATIONS, 1976, 18 (03) : 321 - 325