PUMPING OF GAAS1-XPX - N(AT 77 DEGREES K, FOR X LESS THAN OR EQUAL TO 0.53) BY AN ELECTRON-BEAM FROM A GAS PLASMA

被引：17

作者：

HOLONYAK, N

CAMPBELL, JC

LEE, MH

VERDEYEN, JT

JOHNSON, WL

CRAFORD, MG

FINN, D

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT ELECTR ENGN,URBANA,IL 61801

[3] MONSANTO CO,ST LOUIS,MO 63166

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 12期

关键词：

D O I：

10.1063/1.1662189

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5517 / 5521

页数：5

共 24 条

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[8] RESONANT ENHANCEMENT OF RECOMBINATION PROBABILITY ASSOCIATED WITH ISOELECTRONIC TRAP STATES IN SEMICONDUCTOR ALLOYS IN1-XGAXP-N LASER OPERATION (77 DEGREES K) IN YELLOW-GREEN LAMBDA LESS-THAN-OR-EQUAL-TO 5560 A, H-OMEGA GREATER-THAN-OR-EQUAL-TO 2.23 EV [J].

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[9] EFFECT OF NITROGEN DOPING ON GAAS 1-XPX ELECTROLUMINESCENT DIODES [J].

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[10] WINDOW-HEAT SINK SANDWICH FOR OPTICAL EXPERIMENTS - DIAMOND (OR SAPPHIRE)-SEMICONDUCTOR-INDIUM SANDWICH [J].

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