PRESSURE EXPERIMENT DETERMINATION OF DIRECT-INDIRECT TRANSITION IN QUATERNARY IN1-XGAXP1-ZASZ

[1] Alferov Zh. I., 1975, Pis'ma v Zhurnal Tekhnicheskoi Fizika, V1, P305

[2] EFFECT OF DISORDER ON DIRECT AND INDIRECT BAND-GAPS OF SEMICONDUCTOR ALLOYS [J]. SOLID STATE COMMUNICATIONS, 1974, 15 (11) : 1607 - 1611

[3] CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND [J]. PHYSICAL REVIEW LETTERS, 1971, 26 (04) : 184 - +

[4] COLEMAN JJ, 1975, IEEE J QUANTUM ELECT, VQE11, P471, DOI 10.1109/JQE.1975.1068650

[5] INDEX DISPERSION ABOVE FUNDAMENTAL BAND EDGE IN NITROGEN-DOPED GAAS1-YPY (Y=0.38, EN GREATER-THAN E GAMMA) [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (26) : 1566 - 1569

[6] RESONANT ENHANCEMENT (QUESTIONABLE) OF RECOMBINATION PROBABILITY AT NITROGEN-TRAP, GAMMA-BAND EDGE CROSSOVER IN GAAS1-XPXDOUBLE-BONDN(EN= ET, X TRIPLE-BOND XN) [J]. SOLID STATE COMMUNICATIONS, 1975, 16 (03) : 319 - 322

[7] LIQUID-PHASE EPITAXIAL IN 1-XGAXP1-ZASZ/GAAS1-YPY QUATERNARY (LPE)-TERNARY (VPE) HETEROJUNCTION LASERS (X-0.70, Z-0.01, Y-0.40 - LAMBDA LESS-THAN 6300 A,77 DEGREES K) [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 725 - 727

[8] COLEMAN JJ, TO BE PUBLISHED

[9] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION [J]. PHYSICAL REVIEW, 1968, 168 (03): : 867 - &

[10] RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4075 - &

[1] Alferov Zh. I., 1975, Pis'ma v Zhurnal Tekhnicheskoi Fizika, V1, P305

[2] EFFECT OF DISORDER ON DIRECT AND INDIRECT BAND-GAPS OF SEMICONDUCTOR ALLOYS [J]. SOLID STATE COMMUNICATIONS, 1974, 15 (11) : 1607 - 1611

[3] CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND [J]. PHYSICAL REVIEW LETTERS, 1971, 26 (04) : 184 - +

[4] COLEMAN JJ, 1975, IEEE J QUANTUM ELECT, VQE11, P471, DOI 10.1109/JQE.1975.1068650

[5] INDEX DISPERSION ABOVE FUNDAMENTAL BAND EDGE IN NITROGEN-DOPED GAAS1-YPY (Y=0.38, EN GREATER-THAN E GAMMA) [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (26) : 1566 - 1569

[6] RESONANT ENHANCEMENT (QUESTIONABLE) OF RECOMBINATION PROBABILITY AT NITROGEN-TRAP, GAMMA-BAND EDGE CROSSOVER IN GAAS1-XPXDOUBLE-BONDN(EN= ET, X TRIPLE-BOND XN) [J]. SOLID STATE COMMUNICATIONS, 1975, 16 (03) : 319 - 322

[7] LIQUID-PHASE EPITAXIAL IN 1-XGAXP1-ZASZ/GAAS1-YPY QUATERNARY (LPE)-TERNARY (VPE) HETEROJUNCTION LASERS (X-0.70, Z-0.01, Y-0.40 - LAMBDA LESS-THAN 6300 A,77 DEGREES K) [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 725 - 727

[8] COLEMAN JJ, TO BE PUBLISHED

[9] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION [J]. PHYSICAL REVIEW, 1968, 168 (03): : 867 - &

[10] RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4075 - &