INDEX DISPERSION ABOVE FUNDAMENTAL BAND EDGE IN NITROGEN-DOPED GAAS1-YPY (Y=0.38, EN GREATER-THAN E GAMMA)

被引：10

作者：

COLEMAN, JJ

HOLONYAK, N

LUDOWISE, MJ

KUNZ, AB

ALTARELL, M

GROVES, WO

KEUNE, DL

机构：

[1] UNIV ILLINOIS, DEPT ELECT ENGN, URBANA, IL 61801 USA

[2] MONSANTO CO, ST LOUIS, MO 63166 USA

[3] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA

来源：

PHYSICAL REVIEW LETTERS | 1974年 / 33卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.33.1566

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1566 / 1569

页数：4

共 14 条

[1] ALTARELLI M, UNPUBLISHED
[2] EFFECT OF CRYSTAL COMPOSITION ON QUASIDIRECT RECOMBINATION AND LED PERFORMANCE IN INDIRECT REGION OF GAAS1-XPX-N
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[J]. APPLIED PHYSICS LETTERS, 1974, 25 (01) : 44 - 47
[3] RECOMBINATION TRANSITIONS IN ZN-N-DOPED GAAS1-CHI P CHI IN DIRECT AND INDIRECT COMPOSITION REGIONS
CAMPBELL, JC
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LUDOWISE, MJ
CRAFORD, MG
FINN, D
GROVES, WO
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 795 - 799
[4] MODEL CALCULATIONS FOR RADIATIVE RECOMBINATION IN ZN-N-DOPED GAAS1-XPX IN DIRECT AND INDIRECT COMPOSITION REGION
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KUNZ, AB
CRAFORD, MG
[J]. PHYSICAL REVIEW B, 1974, 9 (10): : 4314 - 4322
[5] COLEMAN JW, UNPUBLISHED
[6] VAPOR-PHASE EPITAXIAL MATERIALS FOR LED APPLICATIONS
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GROVES, WO
[J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 862 - 880
[7] RESONANT ENHANCEMENT OF RECOMBINATION PROBABILITY ASSOCIATED WITH ISOELECTRONIC TRAP STATES IN SEMICONDUCTOR ALLOYS IN1-XGAXP-N LASER OPERATION (77 DEGREES K) IN YELLOW-GREEN LAMBDA LESS-THAN-OR-EQUAL-TO 5560 A, H-OMEGA GREATER-THAN-OR-EQUAL-TO 2.23 EV
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[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 5134 - 5140
[8] EFFECTS OF CONFIGURATION INTERACTION ON INTENSITIES AND PHASE SHIFTS
FANO, U
[J]. PHYSICAL REVIEW, 1961, 124 (06): : 1866 - &
[9] SPECTRAL DISTRIBUTION OF ATOMIC OSCILLATOR STRENGTHS
FANO, U
COOPER, JW
[J]. REVIEWS OF MODERN PHYSICS, 1968, 40 (03) : 441 - +
[10] LINE PROFILES IN FAR-UV ABSORPTION SPECTRA OF RARE GASES
FANO, U
COOPER, JW
[J]. PHYSICAL REVIEW, 1965, 137 (5A): : 1364 - &

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