RECOMBINATION TRANSITIONS IN ZN-N-DOPED GAAS1-CHI P CHI IN DIRECT AND INDIRECT COMPOSITION REGIONS

被引：10

作者：

CAMPBELL, JC

HOLONYAK, N

LEE, MH

LUDOWISE, MJ

CRAFORD, MG

FINN, D

GROVES, WO

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] MONSANTO CO,ST LOUIS,MO 63166

[3] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

关键词：

D O I：

10.1063/1.1663320

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：795 / 799

页数：5

共 20 条

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[9] ISOELECTRONIC TRAP TRANSITIONS IN GAAS-1-X PARA X-N IN REGION OF RESONANT ENHANCEMENT (ENNEGAMMA EGAMMA 0.3 LESS THAN X LESS THAN 0.4)
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