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- [3] RECOMBINATION PROCESSES INVOLVING ZN AND N IN GAAS1-XPX [J]. PHYSICAL REVIEW B, 1974, 10 (04): : 1755 - 1757
- [4] MODEL CALCULATIONS FOR RADIATIVE RECOMBINATION IN ZN-N-DOPED GAAS1-XPX IN DIRECT AND INDIRECT COMPOSITION REGION [J]. PHYSICAL REVIEW B, 1974, 9 (10): : 4314 - 4322
- [5] COLEMAN JJ, UNPUBLISHED DATA
- [6] COLEMAN JJ, TO BE PUBLISHED
- [8] RESONANT ENHANCEMENT OF RECOMBINATION PROBABILITY ASSOCIATED WITH ISOELECTRONIC TRAP STATES IN SEMICONDUCTOR ALLOYS IN1-XGAXP-N LASER OPERATION (77 DEGREES K) IN YELLOW-GREEN LAMBDA LESS-THAN-OR-EQUAL-TO 5560 A, H-OMEGA GREATER-THAN-OR-EQUAL-TO 2.23 EV [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 5134 - 5140