BEHAVIOR OF ABOVE-GAP NN PAIR STATES IN RADIATIVE RECOMBINATION IN GAAS1 - X P X - N+ (X = 0.24, 77 DEGREES K)

被引：3

作者：

LEE, MH

HOLONYAK, N

CAMPBELL, JC

GROVES, WO

CRAFORD, MG

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] MONSANTO CO,ST LOUIS,MO 63166

[3] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.1663489

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1775 / 1778

页数：4

共 15 条

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[10] STIMULATED EMISSION INVOLVING NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX [J].

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