IMPROVEMENT OF CRYSTALLINE QUALITY OF SOS WITH LASER IRRADIATION TECHNIQUES

被引：6

作者：

KOBAYASHI, Y ^{[1
]}

SUZUKI, T ^{[1
]}

TAMURA, M ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES CTR,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 04期

关键词：

D O I：

10.1143/JJAP.20.L249

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L249 / L252

页数：4

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共 17 条

[1] CROSS-SECTIONAL ELECTRON-MICROSCOPY OF SILICON ON SAPPHIRE
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (06) : 325 - 327
[2] MISFIT DISLOCATIONS IN HETEROEPITAXIAL SI ON SAPPHIRE
ABRAHAMS, MS
BUIOCCHI, CJ
CORBOY, JF
CULLEN, GW
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (05) : 275 - 277
[3] BELL AE, 1979, RCA REV, V40, P295
[4] IS SOS READY FOR VLSI
BOREL, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 145 - 150
[5] DETERMINATION OF EXISTING STRESS IN SILICON FILMS ON SAPPHIRE SUBSTRATE USING RAMAN-SPECTROSCOPY
ENGLERT, T
ABSTREITER, G
PONTCHARRA, J
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 31 - 33
[6] HAM WE, 1977, RCA REV, V38, P351
[7] ELECTRON-MICROSCOPE STUDY OF INTRINSIC AND EXTRINSIC STACKING-FAULTS, AND TWINS IN SOS AT THE EARLY STAGE OF EPITAXIAL-GROWTH
HAYASHI, T
KUROSAWA, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 426 - 434
[8] HIGH ELECTRON-MOBILITY SILICON FILMS GROWN ON SAPPHIRE AT HIGH GROWTH-RATE
IMAMURA, Y
DAIDO, K
MIMEGISHI, K
NAKANISHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 547 - 550
[9] 7000-GATE MICROPROCESSOR ON SOS - PULCE
ISOBE, M
IWAMURA, J
OHHASHI, M
KOIKE, H
MAEGUCHI, K
SATO, T
TANGO, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 588 - 595
[10] JASTRZEBSKI L, 1979, APPL PHYS LETT, V35, P15