INFLUENCE OF THE INTER-ATOMIC POTENTIAL AND THE ELASTIC-SCATTERING CROSS-SECTION APPROXIMATION ON THE SPATIAL-DISTRIBUTION OF IMPLANTED IONS

被引:6
作者
BURENKOV, AF
KOMAROV, FF
TEMKIN, MM
机构
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1981年 / 105卷 / 01期
关键词
D O I
10.1002/pssb.2221050122
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:201 / 212
页数:12
相关论文
共 27 条
[1]   DEPTH PROFILES OF HE-3 IONS IMPLANTED INTO SOLIDS AT ENERGIES BETWEEN 20 AND 60 KEV [J].
BOTTIGER, J ;
JENSEN, PS ;
LITTMARK, U .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) :965-970
[2]  
BRICE DK, 1975, ION IMPLANTATION RAN, V1
[3]  
BURENKOV AF, 1980, TABLITSI PARAMETROV
[4]   HEAVY-ION RANGES IN ALUMINUM AND SILICON [J].
COMBASSON, JL ;
FARMERY, BW ;
MCCULLOCH, D ;
NEILSON, GW ;
THOMPSON, MW .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4) :149-&
[5]   CLASSICAL CALCULATION OF DIFFERENTIAL CROSS SECTION FOR SCATTERING FROM A COULOMB POTENTIAL WITH EXPONENTIAL SCREENING [J].
EVERHART, E ;
STONE, G ;
CARBONE, RJ .
PHYSICAL REVIEW, 1955, 99 (04) :1287-1290
[6]  
Firsov O.B., 1958, ZH EKSP TEOR FIZ+, V34, P447
[7]   THEORETICAL DESCRIPTION OF ELASTIC ATOM-ATOM SCATTERING [J].
GARTNER, K ;
HEHL, K .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 94 (01) :231-238
[8]  
GIBBONS JF, 1975, PROJECTED RANGE STAT
[9]  
GRANT WA, 1976, ION BEAM SURFACE LAY, V1, P235
[10]   CONCENTRATION PROFILES OF BORON IMPLANTATIONS IN AMORPHOUS AND POLYCRYSTALLINE SILICON [J].
HOFKER, WK ;
OOSTHOEK, DP ;
KOEMAN, NJ ;
DEGREFTE, HAM .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 24 (04) :223-231