VELOCITY OVERSHOOT EFFECT ON A SHORT-GATE MICROWAVE MESFET

被引：24

作者：

WANG, YC

HSIEH, YT

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1979年 / 47卷 / 01期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1080/00207217908938617

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The device parameters of short-gate GaAs and InP FETs have been found to be dependent on the non-equilibrium velocity overshoot pnenomena. Both v//s//a//t and E//s are found to be larger for shorter gates. The v-E characteristics of Pucel et al. are modified. f//T and other parameters of GaAs, InP and Si are given as a function of gate length and bias. The F//T of InP MESFETs with doping densitity of 10**1**7 cm** minus **3 is only 20% higher than those of equivalent GaAs MESFETs at 300 K. Comparison with other work is also presented.

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页码：49 / 66

页数：18

相关论文

共 16 条

[1] INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].

BARRERA, JS ;

ARCHER, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :1023-1030

[2] DYNAMIC PERFORMANCE OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].

DRANGEID, KE ;

SOMMERHA.R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :82-&

[3] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J].

ENGELMANN, RWH ;

LIECHTI, CA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) :1288-1296

[4] EFFECTS OF INTERVALLEY SCATTERING ON NOISE IN GAAS AND INP FIELD-EFFECT TRANSISTORS [J].

FREY, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (12) :1298-1303

[5] HOT-ELECTRON RELAXATION EFFECTS IN DEVICES [J].

KROEMER, H .

SOLID-STATE ELECTRONICS, 1978, 21 (01) :61-67

[6] FIELD DISTRIBUTION IN JUNCTION FIELD-EFFECT TRANSISTORS AT LARGE DRAIN VOLTAGES [J].

LEHOVEC, K ;

MILLER, RS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) :273-281

[7] MICROWAVE FIELD-EFFECT TRANSISTORS 1976 [J].

LIECHTI, CA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :279-330

[8]

LITTLEJOHN MA, 1977, 6TH BIENN CORN EL EN, P55

[9] TRANSIENT AND STEADY-STATE ELECTRON-TRANSPORT PROPERTIES OF GAAS AND INP [J].

MALONEY, TJ ;

FREY, J .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) :781-787

[10] FREQUENCY LIMITS OF GAAS AND INP FIELD-EFFECT TRANSISTORS AT 300K AND 77K WITH TYPICAL ACTIVE-LAYER DOPING [J].

MALONEY, TJ ;

FREY, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (05) :519-519