ANNEALING STUDY OF ION-IMPLANTED SILICON BY PHOTOELECTROMAGNETIC METHOD

被引：1

作者：

INADA, T

NISHIMURA, H

OHNUKI, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 21卷 / 04期

关键词：

D O I：

10.1063/1.1654315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：137 / +

页数：1

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