FERMI LEVEL MOVEMENT FOR NORMAL-GAAS AND PARA-GAAS INTERFACES - EFFECTS OF TEMPERATURE AND DOPANT CONCENTRATION

被引：8

作者：

ANDERSON, SG

ALDAO, CM

WADDILL, GD

VITOMIROV, IM

CAPASSO, C

WEAVER, JH

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 24期

关键词：

D O I：

10.1063/1.101977

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2547 / 2549

页数：3

共 14 条

[1] TEMPERATURE EFFECTS FOR TI/GAAS(110) INTERFACE FORMATION INVOLVING CLUSTER AND ATOM DEPOSITION
ALDAO, CM
WADDILL, GD
ANDERSON, SG
WEAVER, JH
[J]. PHYSICAL REVIEW B, 1989, 40 (05): : 2932 - 2939
[2] ALDAO CM, UNPUB
[3] KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES
CAO, R
MIYANO, K
KENDELEWICZ, T
CHIN, KK
LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 998 - 1002
[4] CAO R, 1989, APPL PHYS LETT, V54, P13
[5] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS
CROWELL, CR
RIDEOUT, VL
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (02) : 89 - &
[6] COVERAGE DEPENDENCE OF SCHOTTKY-BARRIER FORMATION
KLEPEIS, JE
HARRISON, WA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 964 - 970
[7] SWITCHING OF BAND BENDING AT THE NONREACTIVE CSOX/GAAS(110) INTERFACE
LAUBSCHAT, C
PRIETSCH, M
DOMKE, M
WESCHKE, E
REMMERS, G
MANDEL, T
ORTEGA, JE
KAINDL, G
[J]. PHYSICAL REVIEW LETTERS, 1989, 62 (11) : 1306 - 1309
[8] DELOCALIZATION EFFECTS AT METAL-SEMICONDUCTOR INTERFACES
LUDEKE, R
JEZEQUEL, G
TALEBIBRAHIMI, A
[J]. PHYSICAL REVIEW LETTERS, 1988, 61 (05) : 601 - 604
[9] TIGHT-BINDING MODEL OF SURFACE DONOR-STATES INDUCED BY METAL ADATOMS ON GAAS(110) SURFACES
MONCH, W
[J]. EUROPHYSICS LETTERS, 1988, 7 (03): : 275 - 279
[10] PHOTOEMISSION-STUDY OF ALKALI-GAAS(110) INTERFACES
PRIETSCH, M
DOMKE, M
LAUBSCHAT, C
MANDEL, T
XUE, C
KAINDL, G
[J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1989, 74 (01): : 21 - 33

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