共 36 条
- [1] [Anonymous], ELECTRONIC STRUCTURE
- [2] CHEMISORPTION OF OXYGEN AND ALUMINUM ON THE GAAS (110) SURFACE FROM ABINITIO THEORY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 164 - 168
- [3] IDEAL AL-GE(001) INTERFACE - FROM CHEMISORPTION TO METALLIZATION OF THE AL OVERLAYER [J]. PHYSICAL REVIEW B, 1984, 29 (12): : 6419 - 6424
- [5] KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 998 - 1002
- [6] METAL CLUSTER FORMATION ON GAAS(110) - A TEMPERATURE-DEPENDENCE STUDY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 1975 - 1982
- [7] CAO R, COMMUNICATION
- [9] TIGHT-BINDING THEORY OF HETEROJUNCTION BAND LINEUPS AND INTERFACE DIPOLES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1068 - 1073
- [10] THEORY OF BAND LINE-UPS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1231 - 1238