COVERAGE DEPENDENCE OF SCHOTTKY-BARRIER FORMATION

被引:49
作者
KLEPEIS, JE
HARRISON, WA
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期
关键词
D O I
10.1116/1.584588
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:964 / 970
页数:7
相关论文
共 36 条
  • [21] TEMPERATURE CONTROL OF MORPHOLOGY AND BARRIER FORMATION AT THE IN/GAAS(110) INTERFACE
    MIYANO, KE
    CAO, R
    KENDELEWICZ, T
    LINDAU, I
    SPICER, WE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1989, 7 (03): : 731 - 737
  • [22] TIGHT-BINDING MODEL OF SURFACE DONOR-STATES INDUCED BY METAL ADATOMS ON GAAS(110) SURFACES
    MONCH, W
    [J]. EUROPHYSICS LETTERS, 1988, 7 (03): : 275 - 279
  • [23] FORMATION OF SCHOTTKY-BARRIER AT THE TM/GAAS(110) INTERFACE
    PRIETSCH, M
    DOMKE, M
    LAUBSCHAT, C
    KAINDL, G
    [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (05) : 436 - 439
  • [24] Rhoderick E.H., 1988, METAL SEMICONDUCTOR
  • [25] THEORETICAL-MODELS OF SCHOTTKY BARRIERS
    SCHLUTER, M
    [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 3 - 19
  • [26] UNIFIED MECHANISM FOR SCHOTTKY-BARRIER FORMATION AND III-V-OXIDE INTERFACE STATES
    SPICER, WE
    LINDAU, I
    SKEATH, P
    SU, CY
    CHYE, P
    [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (06) : 420 - 423
  • [27] THE ADVANCED UNIFIED DEFECT MODEL FOR SCHOTTKY-BARRIER FORMATION
    SPICER, WE
    LILIENTALWEBER, Z
    WEBER, E
    NEWMAN, N
    KENDELEWICZ, T
    CAO, R
    MCCANTS, C
    MAHOWALD, P
    MIYANO, K
    LINDAU, I
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1245 - 1251
  • [28] SPICER WE, 1988, AUG P NATO WORKSH ME
  • [29] CORRELATION BETWEEN EF PINNING AND DEVELOPMENT OF METALLIC CHARACTER IN AG OVERLAYERS ON GAAS(110)
    STILES, K
    KAHN, A
    [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (05) : 440 - 443
  • [30] INITIAL-STAGES OF SCHOTTKY-BARRIER FORMATION - TEMPERATURE EFFECTS
    STILES, K
    KAHN, A
    KILDAY, DG
    MARGARITONDO, G
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 987 - 991