FORMATION OF SCHOTTKY-BARRIER AT THE TM/GAAS(110) INTERFACE

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[2] INDEPENDENCE OF FERMI-LEVEL POSITION AND VALENCE-BAND EDGE DISCONTINUITY AT GAAS-GE(100) INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (14) : 1246 - 1249

[3] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656

[4] ON THE FORMATION OF SEMICONDUCTOR INTERFACES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (02): : 145 - 175

[5] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729

[6] CALCULATED PHOTOEMISSION SPECTRA OF THE 4F STATES IN THE RARE-EARTH-METALS [J]. JOURNAL OF PHYSICS F-METAL PHYSICS, 1983, 13 (03): : 703 - 713

[7] ADATOM AGGREGATION, REACTION, AND CHEMICAL TRAPPING AT THE SM/GAAS(110) INTERFACE [J]. PHYSICAL REVIEW B, 1985, 32 (02): : 962 - 968

[8] THEORY OF SURFACE STATES [J]. PHYSICAL REVIEW, 1965, 138 (6A): : 1689 - &

[9] SHORT-RANGE POTENTIAL VARIATIONS AT A METAL-SEMICONDUCTOR INTERFACE [J]. SOLID STATE COMMUNICATIONS, 1986, 60 (10) : 793 - 796

[10] SCHOTTKY-BARRIER FORMATION ON III-V SEMICONDUCTOR SURFACES - A CRITICAL-EVALUATION [J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1986, 13 (01): : 27 - 55

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[2] INDEPENDENCE OF FERMI-LEVEL POSITION AND VALENCE-BAND EDGE DISCONTINUITY AT GAAS-GE(100) INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (14) : 1246 - 1249

[3] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656

[4] ON THE FORMATION OF SEMICONDUCTOR INTERFACES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (02): : 145 - 175

[5] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729

[6] CALCULATED PHOTOEMISSION SPECTRA OF THE 4F STATES IN THE RARE-EARTH-METALS [J]. JOURNAL OF PHYSICS F-METAL PHYSICS, 1983, 13 (03): : 703 - 713

[7] ADATOM AGGREGATION, REACTION, AND CHEMICAL TRAPPING AT THE SM/GAAS(110) INTERFACE [J]. PHYSICAL REVIEW B, 1985, 32 (02): : 962 - 968

[8] THEORY OF SURFACE STATES [J]. PHYSICAL REVIEW, 1965, 138 (6A): : 1689 - &

[9] SHORT-RANGE POTENTIAL VARIATIONS AT A METAL-SEMICONDUCTOR INTERFACE [J]. SOLID STATE COMMUNICATIONS, 1986, 60 (10) : 793 - 796

[10] SCHOTTKY-BARRIER FORMATION ON III-V SEMICONDUCTOR SURFACES - A CRITICAL-EVALUATION [J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1986, 13 (01): : 27 - 55