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KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1987, 5 (04)
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METAL CLUSTER FORMATION ON GAAS(110) - A TEMPERATURE-DEPENDENCE STUDY
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1989, 7 (03)
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CAO R, UNPUB
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DESIGN OF AN ULTRALOW COVERAGE METAL EVAPORATOR BASED ON A GEOMETRIC FACTOR
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1986, 4 (04)
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CHEMICAL-REACTION AT THE IN ON GAAS(110) INTERFACE
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1986, 4 (04)
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ELECTRONIC-STRUCTURE OF A METAL-SEMICONDUCTOR INTERFACE
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PHYSICAL REVIEW B,
1976, 13 (06)
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SCREENING AND DELOCALIZATION EFFECTS IN SCHOTTKY-BARRIER FORMATION
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1988, 6 (04)
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MECHANISMS OF SCHOTTKY-BARRIER FORMATION IN METAL-SEMICONDUCTOR CONTACTS
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1988, 6 (04)
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