MECHANISMS OF SCHOTTKY-BARRIER FORMATION IN METAL-SEMICONDUCTOR CONTACTS

被引：121

作者：

MONCH, W ^{[1
]}

机构：

[1] UNIV DUISBURG,SONDERFORSCH BEREICH 254,D-4100 DUISBURG,FED REP GER

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584248

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1270 / 1276

页数：7

共 72 条

[1] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[2] METALLIZATION AND SCHOTTKY-BARRIER FORMATION
BATRA, IP
CIRACI, S
[J]. PHYSICAL REVIEW B, 1986, 33 (06): : 4312 - 4314
[3] INVESTIGATION OF THE CU/GAAS(110) INTERFACE FORMATION
BOLMONT, D
MERCIER, V
CHEN, P
LUTH, H
SEBENNE, CA
[J]. SURFACE SCIENCE, 1983, 126 (1-3) : 509 - 517
[4] GAAS(110)-AL INTERFACES FORMED AT LOW-TEMPERATURE
BONAPACE, CR
LI, K
KAHN, A
[J]. JOURNAL DE PHYSIQUE, 1984, 45 (NC-5): : 409 - 418
[5] ELECTRON-ENERGY LOSS SPECTROSCOPY FROM GAAS(110) INTERFACES
BONAPACE, CR
TU, DW
LI, K
KAHN, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1099 - 1102
[6] BRAUN F, 1874, POGG ANN, V153, P556
[7] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
Brillson, L. J.
[J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326
[8] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES
BRILLSON, LJ
BACHRACH, RZ
BAUER, RS
MCMENAMIN, J
[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (06) : 397 - 401
[9] KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES
CAO, R
MIYANO, K
KENDELEWICZ, T
CHIN, KK
LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 998 - 1002
[10] ELECTRONIC-STRUCTURE AND SCHOTTKY-BARRIER FORMATION OF AG ON N-TYPE GAAS(110)
CHIN, KK
PAN, SH
MO, D
MAHOWALD, P
NEWMAN, N
LINDAU, I
SPICER, WE
[J]. PHYSICAL REVIEW B, 1985, 32 (02): : 918 - 923