DESIGN OF AN ULTRALOW COVERAGE METAL EVAPORATOR BASED ON A GEOMETRIC FACTOR

被引：9

作者：

CHIN, KK

MCKERNAN, P

LINDAU, I

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.573755

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1949 / 1951

页数：3

共 8 条

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LINDAU, I ;

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[2]

CHIN KK, 1985, UNPUB P MATERIALS RE

[3] INITIAL ADSORPTION STATE FOR AL ON GAAS(110) AND ITS ROLE IN THE SCHOTTKY-BARRIER FORMATION [J].

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KATNANI, AD ;

ZHAO, TX ;

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ZUNGER, A .

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[4] SCHOTTKY-BARRIER FORMATION OF AG ON GAAS(110) [J].

LUDEKE, R ;

CHIANG, TC ;

MILLER, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :581-587

[5] CHEMISORPTION-INDUCED DEFECTS ON GAAS(110) SURFACES [J].

MONCH, W ;

GANT, H .

PHYSICAL REVIEW LETTERS, 1982, 48 (07) :512-515

[6]

OHANLON, 1980, USERS GUIDE VACUUM T, P26

[7]

OHANLON JF, 1980, USERS GUIDE VACUUM T, P9

[8] AL ON GAAS(110) INTERFACE - POSSIBILITY OF ADATOM CLUSTER FORMATION [J].

ZUNGER, A .

PHYSICAL REVIEW B, 1981, 24 (08) :4372-4391

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