KINETIC-STUDY OF SCHOTTKY-BARRIER FORMATION OF IN ON GAAS(110) SURFACE

被引：30

作者：

CHIN, KK

KENDELEWICZ, T

MCCANTS, C

CAO, R

MIYANO, K

LINDAU, I

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573767

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：969 / 972

页数：4

共 17 条

[1] ELECTRON-ENERGY LOSS SPECTROSCOPY FROM GAAS(110) INTERFACES [J].

BONAPACE, CR ;

TU, DW ;

LI, K ;

KAHN, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1099-1102

[2] LINESHAPE STUDIES OF THE X-RAY PHOTOEMISSION OF SMALL METAL-CLUSTERS [J].

CHEUNG, TTP .

SURFACE SCIENCE, 1983, 127 (02) :L129-L134

[3]

CHIN KJ, UNPUB

[4] POSSIBILITY OF INCONGRUOUS INTERFACE BEHAVIOR OF IN ON GAAS(110) [J].

CHIN, KK ;

LINDAU, I .

PHYSICAL REVIEW B, 1985, 32 (10) :6902-6903

[5] ELECTRONIC-STRUCTURE AND SCHOTTKY-BARRIER FORMATION OF AG ON N-TYPE GAAS(110) [J].

CHIN, KK ;

PAN, SH ;

MO, D ;

MAHOWALD, P ;

NEWMAN, N ;

LINDAU, I ;

SPICER, WE .

PHYSICAL REVIEW B, 1985, 32 (02) :918-923

[6]

CHIN KK, UNPUB 1985 P MAT RES

[7] INITIAL ADSORPTION STATE FOR AL ON GAAS(110) AND ITS ROLE IN THE SCHOTTKY-BARRIER FORMATION [J].

DANIELS, RR ;

KATNANI, AD ;

ZHAO, TX ;

MARGARITONDO, G ;

ZUNGER, A .

PHYSICAL REVIEW LETTERS, 1982, 49 (12) :895-898

[8] GAAS(110)-IN - THE BLACK SHEEP IN A WELL-BEHAVED INTERFACE FAMILY [J].

DANIELS, RR ;

ZHAO, TX ;

MARGARITONDO, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :831-834

[9]

KUBASCHEWSKI O, 1979, METALLURGICAL THERMO, P286

[10] THE ROLE OF COMPOUND FORMATION AND HETEROEPITAXY IN INDIUM-BASED OHMIC CONTACTS TO GAAS [J].

LAKHANI, AA .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1888-1891

← 1 2 →