GAAS(110)-IN - THE BLACK SHEEP IN A WELL-BEHAVED INTERFACE FAMILY

被引：33

作者：

DANIELS, RR

ZHAO, TX

MARGARITONDO, G

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 02期

关键词：

D O I：

10.1116/1.572517

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：831 / 834

页数：4

共 22 条

[1]

[Anonymous], COMMUNICATION

[2] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[3] CHEMISORPTION SITE GEOMETRY AND INTERFACE ELECTRONIC-STRUCTURE OF GA AND AL ON GAAS(110) [J].

CHADI, DJ ;

BACHRACH, RZ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1159-1163

[4] SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION FOR THE RELAXED (110) SURFACE OF GAAS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1979, 20 (10) :4150-4159

[5] SURFACE-STATES AND METAL OVERLAYERS ON (110) SURFACE OF GAAS [J].

CHELIKOWSKY, JR ;

LOUIE, SG ;

COHEN, ML .

SOLID STATE COMMUNICATIONS, 1976, 20 (07) :641-644

[6] INITIAL ADSORPTION STATE FOR AL ON GAAS(110) AND ITS ROLE IN THE SCHOTTKY-BARRIER FORMATION [J].

DANIELS, RR ;

KATNANI, AD ;

ZHAO, TX ;

MARGARITONDO, G ;

ZUNGER, A .

PHYSICAL REVIEW LETTERS, 1982, 49 (12) :895-898

[7] EXPERIMENTS ON ULTRATHIN AL OVERLAYERS ON GAAS(110) [J].

DANIELS, RR ;

KATNANI, AD ;

ZHAO, TX ;

MARGARITONDO, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :617-618

[8] STRUCTURAL ENERGIES OF AL DEPOSITED ON THE GAAS(110) SURFACE [J].

IHM, J ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW LETTERS, 1981, 47 (09) :679-682

[9] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF HETEROJUNCTIONS [J].

KATNANI, AD ;

MARGARITONDO, G ;

ALLEN, RE ;

DOW, JD .

SOLID STATE COMMUNICATIONS, 1982, 44 (08) :1231-1234

[10] SCHOTTKY-BARRIER FORMATION OF AG ON GAAS(110) [J].

LUDEKE, R ;

CHIANG, TC ;

MILLER, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :581-587

← 1 2 3 →